| PART |
Description |
Maker |
| STW55NM60N |
N-channel 600 V, 0.047 Ohm, 51 A MDmesh(TM) II Power MOSFET TO-247
|
ST Microelectronics
|
| STW55NM60ND |
N-channel 600 V, 0.047 Ohm, 51 A TO-247 FDmesh(TM) II Power MOSFET (with fast diode)
|
ST Microelectronics
|
| RFP30N06LE RF1S30N06LESM FN3629 |
From old datasheet system
30A/ 60V/ ESD Rated/ 0.047 Ohm/ Logic Level N-Channel Power MOSFETs
30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs 30 A, 60 V, 0.047 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
HARRIS SEMICONDUCTOR
|
| RFD16N05L RFD16N05LSM FN2269 RFD16N05 |
From old datasheet system
16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs
16A/ 50V/ 0.047 Ohm/ Logic Level/ N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
Fairchild Semiconductor
|
| STW50NB20 |
N-CHANNEL 200V - 0.047 OHM - 50A - TO-247 POWERMESH MOSFET
|
ST Microelectronics
|
| RFD16N05SM RFD16N05 FN2467 |
16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs
From old datasheet system
|
Intersil
|
| APT150GN60JDQ4 |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: ISOTOP®; BV(CES) (V): 600; VCE(sat) (V): 1.4; IC (A): 123; 220 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp.
Advanced Power Technology
|
| CM150DY-12H |
Dual IGBTMOD 150 Amperes/600 Volts 150 A, 600 V, N-CHANNEL IGBT
|
Powerex Power Semicondu...
Powerex Power Semiconductors
Powerex, Inc.
|
| CM600DU-24F |
Dual IGBTMOD 600 Amperes/1200 Volts 600 A, 1200 V, N-CHANNEL IGBT
|
Powerex Power Semiconductor...
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| CM400DY-12H |
Dual IGBTMOD 400 Amperes/600 Volts 400 A, 600 V, N-CHANNEL IGBT
|
Powerex, Inc.
Powerex Power Semiconductors
|
| 600-052 |
600-052, 600-090, 600-057, 600-083,600-052-1, 600-090-1, 600-057-1 & 600-083-1 Clamping Bands
|
Glenair, Inc.
|
